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US 11,908,684 B2Granted
Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
AssigneeASM IP Holding B.V.
InventorsShinya Yoshimoto, Jun Yoshikawa, Toshihisa Nozawa
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Abstract
Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.
Claims20
A method of forming an electronic device structure, the method comprising:
- providing a substrate on a susceptor within a reaction chamber, the substrate having features thereon and comprising a layer comprising silicon nitride overlying the features;
- providing a pole-type antenna above the susceptor, the pole-type antenna extending across two sides of the reaction chamber and positioned parallel to the susceptor;
- forming activated species by irradiating a reforming gas with microwave radiation emitted from the pole-type antenna;
- and
- exposing the layer comprising silicon nitride to the activated species.
2 more elements
Dependencies are inferred from the claim text.