Substrate processing method and substrate processing apparatus

A substrate processing method, comprising:

• partially etching a metal polycrystalline film at a peripheral portion of a substrate in a thickness direction by supplying an etching liquid to the peripheral portion while rotating the substrate having the metal polycrystalline film formed on a front surface thereof;
• washing away an etching residue generated in the partially etching of the metal polycrystalline film with a rinse liquid by supplying the rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the partially etching of the metal polycrystalline film while rotating the substrate;
• etching a remaining portion of the metal polycrystalline film at the peripheral portion of the substrate by supplying the etching liquid to the peripheral portion while rotating the substrate;
• washing away an etching residue generated in the etching of the remaining portion of the metal polycrystalline film with the rinse liquid by supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the etching of the remaining portion of the metal polycrystalline film while rotating the substrate;
• and
• drying the substrate after the washing away of the etching residue generated in the etching of the remaining portion of the metal polycrystalline film,
• wherein the washing away of the etching residue generated in the partially etching of the metal polycrystalline film includes starting the supplying of the rinse liquid during the supplying of the etching liquid in the partially etching of the metal polycrystalline film,
• wherein the washing away of the etching residue generated in the etching of the remaining portion of the metal polycrystalline film includes starting the supplying of the rinse liquid during the supplying of the etching liquid in the etching of the remaining portion of the metal polycrystalline film,
• wherein the washing away of the etching residue generated in the partially etching of the metal polycrystalline film or the washing away of the etching residue generated in the etching of the remaining portion of the metal polycrystalline film includes, while discharging the rinse liquid from a nozzle, moving the nozzle from an outside of the substrate toward the center side of the substrate beyond an edge of the substrate and increasing a flow rate of the rinse liquid discharged from the nozzle after the nozzle crosses the edge of the substrate.

A substrate processing method, comprising:

• partially etching a metal polycrystalline film at a peripheral portion of a substrate in a thickness direction by supplying an etching liquid to the peripheral portion while rotating the substrate having the metal polycrystalline film formed on a front surface thereof,
• washing away an etching residue generated in the partially etching of the metal polycrystalline film with a rinse liquid by supplying the rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the partially etching of the metal polycrystalline film while rotating the substrate;
• etching a remaining portion of the metal polycrystalline film at the peripheral portion of the substrate by supplying the etching liquid to the peripheral portion while rotating the substrate;
• washing away an etching residue generated in the etching of the remaining portion of the metal polycrystalline film with the rinse liquid by supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the etching of the remaining portion of the metal polycrystalline film while rotating the substrate;
• drying the substrate after the washing away of the etching residue generated in the etching of the remaining portion of the metal polycrystalline film;
• imaging the peripheral portion with an imaging device during the supplying of the etching liquid onto the substrate;
• and
• determining whether or not the etching residue is generated at the peripheral portion based on a change in contrast of an image captured by the imaging device.

A substrate processing apparatus, comprising:

• a rotating/holding device configured to hold and rotate a substrate having a metal polycrystalline film formed on a front surface thereof;
• a chemical liquid supply configured to supply an etching liquid to the front surface of the substrate;
• a rinse liquid supply configured to supply a rinse liquid to the front surface of the substrate;
• and
• a controller,
• wherein the controller is configured to perform a first processing of partially etching the metal polycrystalline film at a peripheral portion of the substrate in a thickness direction of the metal polycrystalline film to etch an upper portion of the metal polycrystalline film by controlling the chemical liquid supply to supply the etching liquid to the peripheral portion while controlling the rotating/holding device to hold and rotate the substrate,
• the controller is also configured to perform a second processing of washing away an etching residue generated in the first processing with a rinse liquid by controlling the rinse liquid supply to supply the rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the first processing while controlling the rotating/holding device to hold and rotate the substrate,
• the controller is also configured to perform a third processing of etching a remaining portion of the metal polycrystalline film as a lower portion of the metal polycrystalline film at the peripheral portion of the substrate in the thickness direction of the metal polycrystalline film by controlling the chemical liquid supply to supply the etching liquid to the peripheral portion while controlling the rotating/holding device to hold and rotate the substrate,
• the controller is also configured to perform a fourth processing of washing away an etching residue generated in the third processing by controlling the rinse liquid supply to supply the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the third processing while controlling the rotating/holding device to hold and rotate the substrate, and
• the controller is also configured to perform a fifth processing of drying the substrate by controlling the rotating/holding device to hold and rotate the substrate.

A substrate processing apparatus, comprising:

• a rotating/holding device configured to hold and rotate a substrate having a metal polycrystalline film formed on a front surface thereof;
• a chemical liquid supply configured to supply an etching liquid to the front surface of the substrate;
• a rinse liquid supply configured to supply a rinse liquid to the front surface of the substrate;
• and
• a controller,
• wherein the controller is configured to perform a first processing of partially etching the metal polycrystalline film at a peripheral portion of the substrate in a thickness direction by controlling the chemical liquid supply to supply the etching liquid to the peripheral portion while controlling the rotating/holding device to hold and rotate the substrate,
• the controller is also configured to perform a second processing of washing away an etching residue generated in the first processing with a rinse liquid by controlling the rinse liquid supply to supply the rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the first processing while controlling the rotating/holding device to hold and rotate the substrate,
• the controller is also configured to perform a third processing of etching a remaining portion of the metal polycrystalline film at the peripheral portion of the substrate by controlling the chemical liquid supply to supply the etching liquid to the peripheral portion while controlling the rotating/holding device to hold and rotate the substrate,
• the controller is also configured to perform a fourth processing of washing away an etching residue generated in the third processing by controlling the rinse liquid supply to supply the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the third processing while controlling the rotating/holding device to hold and rotate the substrate, and
• the controller is also configured to perform a fifth processing of drying the substrate by controlling the rotating/holding device to hold and rotate the substrate,
• wherein the second processing includes starting the supply of the rinse liquid during the supply of the etching liquid in the first processing,
• wherein the fourth processing includes starting the supply of the rinse liquid during the supply of the etching liquid in the third processing,
• wherein the second processing or the fourth processing includes, while discharging the rinse liquid from a nozzle of the rinse liquid supply, moving the nozzle from an outside of the substrate toward the center side of the substrate beyond an edge of the substrate and increasing a flow rate of the rinse liquid discharged from the nozzle after the nozzle crosses the edge of the substrate.