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US 11,908,666 B2Granted
Stage and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsYasuharu Sasaki, Tsuguto Sugawara, Shin Yamaguchi, Hajime Tamura
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AssigneeTokyo Electron Limited
InventorsYasuharu Sasaki, Tsuguto Sugawara, Shin Yamaguchi, Hajime Tamura
Estimating the term…
A plasma processing apparatus includes a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode.
A plasma processing apparatus comprising:
An electrostatic chuck comprising:
A substrate support comprising:
Dependencies are inferred from the claim text.