Plasma processing apparatus and measurement method
AssigneeTokyo Electron Limited
InventorsChishio Koshimizu, Manabu Iwata
Life of this patent
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Abstract
A disclosed plasma processing apparatus includes a chamber, a substrate support, an electric path, and a measuring device. The substrate support is accommodated in the chamber. The electric path is coupled to or capacitively coupled to an edge ring on the substrate support. The measuring device measures an electrical characteristic value of the edge ring with a voltage applied to the edge ring on the substrate support through the electric path. The electrical characteristic value measured by the measuring device is variable in accordance with a thickness of the edge ring.
Claims19
A plasma processing apparatus, comprising:
- a chamber;
- a substrate support accommodated in the chamber;
- an electric path coupled to or capacitively coupled to an edge ring on the substrate support;
- a measuring device configured to measure an electrical characteristic value of the edge ring with a voltage applied to the edge ring on the substrate support through the electric path, the electrical characteristic value being variable in accordance with a thickness of the edge ring;
- an adjuster configured to adjust an upper end position of a sheath above the edge ring;
- and
- a controller configured to control the adjuster to reduce tilting of a recess in an edge of a substrate on the substrate support, the controller being configured to control the adjuster in accordance with the electrical characteristic value, or a thickness of the edge ring determined based on the electrical characteristic value or a decrease in the thickness of the edge ring determined based on the electrical characteristic value.
A plasma processing apparatus, comprising:
- a chamber;
- a substrate support accommodated in the chamber;
- an electric path coupled to or capacitively coupled to an edge ring on the substrate support;
- and
- a measuring device configured to measure an electrical characteristic value of the edge ring with a voltage applied to the edge ring on the substrate support through the electric path, the electrical characteristic value being variable in accordance with a thickness of the edge ring, wherein
- the measuring device measures the electrical characteristic value with a direct-current voltage applied to the edge ring through the electric path coupled to the edge ring,
- the electrical characteristic value includes a resistance of the edge ring,
- the electric path includes a first contact and a second contact in contact with the edge ring at positions symmetric to each other about a central axis of the edge ring,
- the measuring device includes
- a current sensor located on the electric path and configured to measure a current value of a current flowing through the edge ring,
- a first voltage sensor configured to measure a first potential difference across a first area of the edge ring, the first area extending in a first part of a plane including the first contact, the second contact, and the central axis, and
- a second voltage sensor configured to measure a second potential difference across a second area of the edge ring, the second area extending in a second part of the plane, and
- the measuring device determines the resistance based on an average of the first potential difference and the second potential difference and on the current value.
A plasma processing apparatus, comprising:
- a chamber;
- a substrate support accommodated in the chamber;
- an electric path coupled to or capacitively coupled to an edge ring on the substrate support;
- and
- a measuring device configured to measure an electrical characteristic value of the edge ring with a voltage applied to the edge ring on the substrate support through the electric path, the electrical characteristic value being variable in accordance with a thickness of the edge ring,
- wherein the measuring device determines a thickness of the edge ring or a decrease in the thickness of the edge ring based on the electrical characteristic value.
Dependencies are inferred from the claim text.