US 11,908,664 B2Granted

Plasma processing apparatus

AssigneeTokyo Electron Limited

InventorsNaohiko Okunishi, Nozomu Nagashima, Tomoyuki Takahashi

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Abstract

A plasma processing apparatus includes a stage for supporting a target object in a chamber defined by a chamber body. The stage includes a lower electrode, an electrostatic chuck provided on the lower electrode, heaters provided in the electrostatic chuck, and terminals electrically connected to the heaters. A conductor pipe electrically connects a high frequency power supply and the lower electrode and extends from the lower electrode to the outside of the chamber body. Power supply lines supply power from a heater controller to the heaters. Filters partially forming the power supply lines prevent the inflow of high frequency power from the heaters to the heater controller. The power supply lines include wirings which respectively connect the terminals and the filters and extend to the outside of the chamber body through an inner bore of the conductor pipe.

Claims17

Dependent claims

A plasma processing apparatus comprising:

a chamber body that provides a chamber;
a stage configured to support a target object in the chamber, the stage including a lower electrode, an electrostatic chuck provided on the lower electrode, a plurality of heaters, and a plurality of terminals electrically connected to the plurality of heaters;
a high frequency power supply provided outside the chamber body and configured to generate a high frequency power to be supplied to the lower electrode;
a conductor pipe configured to electrically connect the high frequency power supply and the lower electrode, and wherein the conductor pipe is electrically connected to the high frequency power supply;
a plurality of power supply lines configured to supply power from a heater controller to the plurality of heaters;
and
a filter device which includes a plurality of filters, which partially forms the plurality of power supply lines, the plurality of filters provided outside the chamber body and configured to prevent inflow of high frequency power from the plurality of heaters to the heater controller,
wherein the plurality of power supply lines includes a plurality of wirings respectively connecting the plurality of terminals and the plurality of filters,
wherein the plurality of wirings extends to outside of the chamber body through an inner bore of the conductor pipe,
wherein the stage further includes a conductive member provided below the lower electrode,
wherein the conductor pipe has a first pipe, a second pipe, and a third pipe, each of the first, second and third pipes made of a conductor,
wherein the second pipe is connected to the conductive member,
wherein the third pipe is electrically connected to the high frequency power supply,
wherein a lower end portion of the first pipe is fitted into an inner bore of the third pipe,
wherein an upper end portion of the first pipe is fitted into an inner bore of the second pipe, and
wherein the third pipe is vertically below the second pipe.

13 more elements

A plasma processing apparatus comprising:

a plasma processing chamber;
a stage disposed in in the plasma processing chamber;
an electrode disposed in the stage;
a plurality of heaters disposed in the stage;
a high frequency power supply;
a conductive pipe electrically connected between the high frequency power supply and the electrode, the conductive pipe including an inner bore;
a heater controller;
a plurality of high frequency inflow prevention filters electrically connected between the plurality of heaters and the heater controller, respectively;
and
a plurality of wirings, each wiring connecting at least one heater of the plurality of heaters and at least one high frequency inflow prevention filter of the plurality of high frequency inflow prevention filters through the inner bore of the conductive pipe;
wherein the stage further includes a conductive member disposed below the electrode,
the conductive member is electrically connected between the electrode and the conductive pipe,
a space is defined between the conductive member and the electrode,
the plurality of wirings connect the respective heaters and the respective high frequency inflow prevention filters through the space and the inner bore of the conductive pipe;
wherein the apparatus further comprises a matching unit for impedance matching, provided between the conductive pipe and the high frequency power supply, wherein the matching unit is provided at a lateral side of the conductive pipe;
wherein the conductive pipe includes a first pipe, a second pipe, and a third pipe,
the second pipe is connected to the conductive member,
the third pipe is connected to the high frequency power supply via the matching unit,
a first end portion of the first pipe is fitted into an inner bore of the third pipe, and
a second end portion of the first pipe is fitted into an inner bore of the second pipe.

17 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/981,265Filed 4 Nov 2022 · continuation
Priority: JP 2017-13992019 Jul 2017
Published: US 2023/0057937 A123 Feb 2023
Granted: 20 Feb 2024
Term ends: Not estimatedThe source records don’t support an estimate.

Classification19 codes

H01J 37/32577
Electrodes: electrical connecting means
C23C 16/4586
The substrate being supported substantially horizontally: elements in the interior of the support, e.g. electrodes, heating or cooling devices
H01J 37/32174
Radio frequency generated discharge: circuits specially adapted for controlling the RF discharge
H01J 37/32541
Electrodes: shape

Family

Application16/037,461Parent of this continuation · filed 17 Jul 2018
US 2023/0057937 A1Pre-grant publication · published 23 Feb 2023
US 11,501,958 B2Parent of this continuation
US 2019/0027344 A1Published application
US 11,908,664 B2This patent

From the US filing history. Foreign family members aren’t listed.

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