Semiconductor device including abnormality detection circuit and semiconductor device control method for detecting abnormality
AssigneeFujitsu Limited
InventorsMasahiro Yanagida, Hiroyuki Fujimoto
Life of this patent
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AssigneeFujitsu Limited
InventorsMasahiro Yanagida, Hiroyuki Fujimoto
Estimating the term…
A semiconductor device includes a plurality of built-in memories, and each of the built-in memories includes a plurality of memory cells. Each built-in memory includes a selector circuit that connects a selected memory cell among the memory cells to an outside, a memory cell relief circuit that, when a fault has occurred in one of the memory cells, transmits, to the selector circuit, a relief signal configured to connect a normal memory cell to the outside without connecting the one of the memory cells in which the fault has occurred, to the outside, and switches selection in the selector circuit, and an abnormality detection circuit that performs abnormality detection for the memory cell relief circuit, based on a temporal change in the relief signal output from the memory cell relief circuit.
A semiconductor device comprising a plurality of built-in memories, wherein
A semiconductor device control method for detecting abnormality of a plurality of built-in memories in the semiconductor device, the method comprising:
Dependencies are inferred from the claim text.