Memory device and method of operating the memory device

A storage device comprising:

• a memory device including a memory block including memory cells;
• and
• a memory controller comprising an operation controller configured to output a read command and an address for the memory cells, and provide an open read command and the address to the memory device when a read operation performed by the memory device in response to the read command has failed,
• wherein in response to the open read command, the memory device applies a pass voltage to adjacent word lines adjacent to a selected word line including the memory cells, discharges the pass voltage to a target pass voltage less than the pass voltage by a step voltage after a predetermined time elapses and, after a target read time elapses from when the pass voltage is discharged to the target pass voltage, obtains data stored in the memory cells through bit lines connected to the memory cells.

A method of operating a storage device for performing a read operation of reading data stored in selected memory cells connected to a selected word line among a plurality of word lines included in a target memory block among a plurality of memory blocks, the method comprising:

• applying a pass voltage to word lines adjacent to the selected word line;
• discharging the pass voltage to a target pass voltage less than the pass voltage;
• sensing a potential of bit lines connected to the selected memory cells connected to the selected word line after the pass voltage is discharged to the target pass voltage and a target read time elapses;
• and
• determining whether the read operation has passed or failed by comparing the number of error bits of read data with the number of correctable error bits with respect to the selected memory cells.