Memory system

A memory system comprising:

• a first wiring extending in a first direction;
• a second wiring extending in a second direction intersecting with the first direction;
• a memory cell connected to the first wiring and the second wiring between the first wiring and the second wiring, the memory cell including a variable resistance element and a switching element;
• and
• a controller;
• wherein
• the variable resistance element is switchable between a first low-resistance state and a first high-resistance state,
• the switching element is switchable between a second low-resistance state and a second high-resistance state in accordance with a supplied voltage,
• a resistance of the second low-resistance state is lower than a resistance of the first low-resistance state,
• a resistance of the second high-resistance state is higher than a resistance of the first high-resistance state,
• the switching element is a two-terminal type element, and
• the controller is configured to
• supply the first wiring with a first voltage switching the switching element to the second low-resistance state,
• supply the first wiring with a second voltage switching the switching element from the second low-resistance state to the second high-resistance state after the first voltage is supplied, and
• detect a first target voltage of the second wiring after the second voltage is supplied.