BiSbX (012) layers having increased operating temperatures for SOT and MRAM devices

A magnetic recording device comprising a magnetic recording head, the magnetic recording head comprising:

• a spin-orbit torque (SOT) device, comprising:
• a topological insulator (TI) modulation multilayer, the TI modulation multilayer comprising an alternating stack, the alternating stack repeating one or more times, wherein the alternating stack comprises:
• one or more texturing layers;
• and
• one or more TI lamellae layers comprising BiSb and clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material.

A magneto-resistive memory comprising:

• a spin-orbit torque (SOT) device, comprising:
• a topological insulator (TI) modulation multilayer, the TI modulation multilayer comprising an alternating stack, the alternating stack repeating one or more times, wherein the alternating stack comprises:
• one or more texturing layers;
• and
• one or more TI lamellae layers comprising BiSb and clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material.

A spin-orbit torque (SOT) device, comprising:

• a topological insulator (TI) modulation multilayer, the TI modulation multilayer comprising:
• two or more bismuth (Bi) or bismuth-rich bismuth antimony (BiSb) composition modulation layers comprising bismuth in an atomic percent greater than or equal to about 96%;
• a plurality of TI lamellae layers comprising BiSb having a crystal orientation of (012) and clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material;
• and
• one or more texturing layers.

A magnetic recording device comprising a magnetic recording head, the magnetic recording head comprising:

• a spin-orbit torque (SOT) device, comprising:
• a topological insulator (TI) modulation multilayer, the TI modulation multilayer comprising:
• two or more bismuth (Bi) or bismuth-rich bismuth antimony (BiSb) composition modulation layers comprising bismuth in an atomic percent greater than or equal to about 96%;
• a plurality of TI lamellae layers comprising BiSb having a crystal orientation of (012) and clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material;
• and
• one or more texturing layers.

A magneto-resistive memory comprising:

• a spin-orbit torque (SOT) device, comprising:
• a topological insulator (TI) modulation multilayer, the TI modulation multilayer comprising:
• two or more bismuth (Bi) or bismuth-rich bismuth antimony (BiSb) composition modulation layers comprising bismuth in an atomic percent greater than or equal to about 96%;
• a plurality of TI lamellae layers comprising BiSb having a crystal orientation of (012) and clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material;
• and
• one or more texturing layers.

A spin-orbit torque (SOT) device, comprising:

• a topological insulator (TI) modulation multilayer, the TI modulation multilayer comprising:
• a plurality of bismuth (Bi) or bismuth-rich bismuth antimony (BiSb) composition modulation layers comprising bismuth in an atomic percent of about 96% to about 100%;
• and
• one or more alternating stacks, the one or more alternating stacks comprising:
• a first TI lamellae layer comprising BiSb having a crystal orientation of (012) and clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material;
• and
• a first texturing layer disposed over the first TI lamellae layer, the first texturing layer being selected from the group consisting of:
• an amorphous material comprising covalently bonded carbide, oxide, or nitride, a face centered cubic (fcc) material, a tetragonal material, a body centered cubic (bcc) material, and a metallic amorphous material.

A magnetic recording device comprising a magnetic recording head, the magnetic recording head comprising:

• a spin-orbit torque (SOT) device, comprising:
• a topological insulator (TI) modulation multilayer, the TI modulation multilayer comprising:
• a plurality of bismuth (Bi) or bismuth-rich bismuth antimony (BiSb) composition modulation layers comprising bismuth in an atomic percent of about 96% to about 100%;
• and
• one or more alternating stacks, the one or more alternating stacks comprising:
• a first TI lamellae layer comprising BiSb having a crystal orientation of (012) and clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material;
• and
• a first texturing layer disposed over the first TI lamellae layer, the first texturing layer being selected from the group consisting of:
• an amorphous material comprising covalently bonded carbide, oxide, or nitride, a face centered cubic (fcc) material, a tetragonal material, a body centered cubic (bcc) material, and a metallic amorphous material.

A magneto-resistive memory comprising:

• a spin-orbit torque (SOT) device, comprising:
• a topological insulator (TI) modulation multilayer, the TI modulation multilayer comprising:
• a plurality of bismuth (Bi) or bismuth-rich bismuth antimony (BiSb) composition modulation layers comprising bismuth in an atomic percent of about 96% to about 100%;
• and
• one or more alternating stacks, the one or more alternating stacks comprising:
• a first TI lamellae layer comprising BiSb having a crystal orientation of (012) and clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material;
• and
• a first texturing layer disposed over the first TI lamellae layer, the first texturing layer being selected from the group consisting of:
• an amorphous material comprising covalently bonded carbide, oxide, or nitride, a face centered cubic (fcc) material, a tetragonal material, a body centered cubic (bcc) material, and a metallic amorphous material.