Corrective read of a memory device with reduced latency
AssigneeMicron Technology, Inc.
InventorsTao Liu, Zhengang Chen, Ting Luo
Life of this patent
Estimating the term…
Loading patent…
AssigneeMicron Technology, Inc.
InventorsTao Liu, Zhengang Chen, Ting Luo
Estimating the term…
Methods, systems, and devices for a corrective read of a memory device with reduced latency are described. A memory system may identify a read error based on accessing a memory device, and may select a trim setting for a performing a corrective read operation based on a data retention condition associated with the accessed memory device. Such a data retention condition may be associated with a data retention duration, or a cross-temperature condition, among other criteria or combinations thereof. In some implementations, the memory system may select from a subset of possible trim settings, which may be associated with relevant process corners. For example, the memory system may select between a first trim setting that is associated with a relatively large cross-temperature and a relatively short data retention duration and a second trim setting that is associated with a relatively small cross-temperature and a relatively long data retention duration.
An apparatus, comprising:
A non-transitory computer-readable medium storing code comprising instructions which, when executed by a processor of an electronic device, cause the electronic device to:
A method at a controller, the method comprising:
Dependencies are inferred from the claim text.