Sensing unit and sensing device
AssigneeShanghai Tianma Micro-Electronics Co., Ltd.
InventorsShun Gong, Linzhi Wang, Kerui Xi, Jiansheng Zhong
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Abstract
A sensing unit and a sensing device are provided. The sensing unit includes a substrate; a plurality of thin-film transistors and a plurality of sensing electrodes disposed on a side of the substrate; and a ring electrode disposed on a first electrode layer. The first electrode layer is located on a side of a thin-film transistor of the plurality of thin-film transistors away from the substrate. The plurality of sensing electrodes are disposed on the first electrode layer, and the ring electrode is disposed around the plurality of sensing electrodes.
Claims18
A sensing unit, comprising:
- a substrate;
- a plurality of thin-film transistors and a plurality of sensing electrodes disposed on a side of the substrate;
- and
- a ring electrode disposed in a first electrode layer, wherein the first electrode layer is located on a side of a thin-film transistor of the rituality of thin-film transistors away from the substrate,
- wherein the plurality of sensing electrodes disposed in the first electrode layer, and the ring electrode is disposed around the plurality of sensing electrodes and does not overlap the sensing electrodes in a direction perpendicular to the substrate.
A sensing device, comprising:
- a sensing unit, including a substrate;
- a plurality of thin-film transistors and a plurality of sensing electrodes disposed on a side of the substrate;
- and a ring electrode disposed in a first electrode layer, wherein the first electrode layer is located on a side of a thin-film transistor of the plurality of thin-film transistors away from the substrate, the plurality of sensing electrodes are disposed in the first electrode layer, and the ring electrode is disposed around the plurality of sensing electrodes and does not overlap the sensing electrodes in a direction perpendicular to the substrate;
- a driving circuit;
- and
- a signal reading circuit,
- wherein:
- a gate of the thin-film transistor is electrically connected to the driving circuit through a gate line;
- a source of the thin-film transistor is electrically connected to the signal reading circuit through a data line;
- and
- the gate line intersects the data line.
Dependencies are inferred from the claim text.