Abnormal power loss recovery method, memory control circuit unit, and memory storage device

A memory control circuit unit, configured to control a memory storage device, wherein the memory storage device comprises a rewritable non-volatile memory module, and the memory control circuit unit comprises:

• a host interface configured to be coupled to a host system;
• a memory interface configured to be coupled to the rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of super-physical units, the super-physical units comprise at least two physical erasing units, and the at least two physical erasing units belong to different operation units and each of the physical erasing units comprises a plurality of physical programming units;
• and
• a memory management circuit coupled to the host interface and the memory interface,
• wherein the memory management circuit is further configured to read data stored in a first super-physical unit without a corresponding RAID ECC code when the memory storage device is powered on again and detected as an abnormal power loss to obtain first data,
• wherein the first super-physical unit is a last super-physical unit to which data is written before the abnormal power loss occurs, and
• the memory management circuit is further configured to copy the first data to a second super-physical unit,
• wherein before the operation of reading the data stored in the first super-physical unit without the corresponding RAID ECC code to obtain the first data, the memory management circuit is further configured to:
• scan the first super-physical unit to obtain an amount of written data of the first super-physical unit when the memory storage device is powered on again and detected as the abnormal power loss;
• determine whether the amount of written data is greater than a first threshold value;
• and read all data stored in the first super-physical unit to obtain second data, and copy the second data to the second super-physical unit in response to the amount of written data not being greater than the first threshold value.

A memory storage device, comprising:

• a connection interface unit configured to be coupled to a host system;
• a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of super-physical units, the super-physical units comprise at least two physical erasing units, and the at least two physical erasing units belong to different operation units and each of the physical erasing units comprises a plurality of physical programming units;
• and
• a memory control circuit unit coupled to the connection interface unit and the rewritable non-volatile memory module,
• wherein the memory control circuit unit is further configured to read data stored in a first super-physical unit without a corresponding RAID ECC code when the memory storage device is powered on again and detected as an abnormal power loss to obtain first data,
• wherein the first super-physical unit is a last super-physical unit to which data is written before the abnormal power loss occurs, and
• the memory control circuit unit is further configured to copy the first data to a second super-physical unit,
• wherein before the operation of reading the data stored in the first super-physical unit without the corresponding RAID ECC code to obtain the first data, the memory control circuit unit is further configured to:
• scan the first super-physical unit to obtain an amount of written data of the first super-physical unit when the memory storage device is powered on again and detected as the abnormal power loss;
• determine whether the amount of written data is greater than a first threshold value;
• and read all data stored in the first super-physical unit to obtain second data, and copy the second data to the second super-physical unit in response to the amount of written data not being greater than the first threshold value.