Memory devices and methods for operating the same

A memory device comprising:

• a plurality of memory cells;
• a plurality of evaluation elements, wherein each evaluation element of the plurality of evaluation elements is connectable with a memory cell of the memory device and is configured to evaluate a physical parameter, of the memory cell, comprising at least one of a voltage at the memory cell, a potential at the memory cell, a current through the memory cell or an electrical resistance of the memory cell;
• an interconnection unit configured for:
• at a first time, connecting the plurality of memory cells to a first assignment of evaluation elements in a first state;
• and
• at a second time, connecting the plurality of memory cells to a second assignment of the evaluation elements in a second state, wherein in the second state, at least one memory cell of the plurality of memory cells is connected to a different evaluation element to which the at least one memory cell is not connected in the first state;
• an evaluation unit configured for controlling the interconnection unit to transition from (i) the first state in which the at least one memory cell is not connected to the different evaluation element to (ii) the second state in which the at least one memory cell is connected to the different evaluation element;
• and
• a memory having stored thereon error information indicating that a reading operation using a pair of a memory cell of the plurality of memory cells and an evaluation element in the first state is error-prone, wherein the evaluation unit is configured for:
• reading the error information from the memory;
• and
• obtaining, using the evaluation elements connected to the plurality of memory cells in accordance with the second assignment, an evaluation result of the plurality of memory cells based on a reading operation performed using the second state based on the error information.

A memory device comprising:

• a memory cell;
• a plurality of evaluation elements, wherein each evaluation element of the plurality of evaluation elements is connectable with the memory cell of the memory device and is configured to evaluate a physical parameter, of the memory cell, comprising at least one of a voltage at the memory cell, a potential at the memory cell, a current through the memory cell or an electrical resistance of the memory cell;
• an interconnection unit configured for:
• at a first time, connecting the memory cell to a first evaluation element but not a second evaluation element in a first state;
• and
• at a second time, connecting the memory cell to the second evaluation element but not the first evaluation element in a second state;
• and
• an evaluation unit configured for:
• obtaining a first evaluation result of the memory cell in the first state based on one or more first evaluations of one or more physical parameters of the memory cell;
• obtaining a second evaluation result of the memory cell in the second state based on one or more second evaluations of one or more physical parameters of the memory cell;
• determining a deviation between the first evaluation result and the second evaluation result;
• and
• storing a deviation information, that is based on the deviation, in a memory of the memory device.

A method for operating a memory device comprising a plurality of memory cells and a plurality of evaluation elements, wherein each evaluation element of the plurality of evaluation elements is connectable with a memory cell of the memory device and is configured to evaluate a physical parameter, of the memory cell, comprising at least one of a voltage at the memory cell, a potential at the memory cell, a current through the memory cell or an electrical resistance of the memory cell, the method comprising:

• connecting the plurality of memory cells to a first assignment of evaluation elements in a first state;
• connecting the plurality of memory cells to a second assignment of the evaluation elements in a second state, wherein, in the second state, at least one memory cell of the plurality of memory cells is connected to a different evaluation element to which the at least one memory cell is not connected in the first state;
• evaluating the plurality of memory cells in the first state in which the at least one memory cell is not connected to the different evaluation element, using the evaluation elements connected to the plurality of memory cells in accordance with the first assignment, to obtain a first evaluation result based on one or more first evaluations of one or more physical parameters of the plurality of memory cells;
• and
• evaluating the plurality of memory cells in the second state in which the at least one memory cell is connected to the different evaluation element, using the evaluation elements connected to the plurality of memory cells in accordance with the second assignment, to obtain a second evaluation result based on one or more second evaluations of one or more physical parameters of the plurality of memory cells.

A method for operating a memory device comprising a plurality of memory cells and a plurality of evaluation elements, wherein each evaluation element of the plurality of evaluation elements is connectable with a memory cell of the memory device and is configured to evaluate a physical parameter, of the memory cell, comprising at least one of a voltage at the memory cell, a potential at the memory cell, a current through the memory cell or an electrical resistance of the memory cell, the method comprising:

• connecting the plurality of memory cells to a first assignment of evaluation elements in a first state;
• connecting the plurality of memory cells to a second assignment of the evaluation elements in a second state, wherein, in the second state, at least one memory cell of the plurality of memory cells is connected to a different evaluation element to which the at least one memory cell is not connected in the first state;
• and
• reading error information, indicating that a reading operation using a pair of a memory cell of the plurality of memory cells and an evaluation element in the first state, in which the at least one memory cell is not connected to the different evaluation element, is error-prone, from a memory to obtain, using the evaluation elements connected to the plurality of memory cells in accordance with the second assignment, an evaluation result of the plurality of memory cells based on a reading operation performed using the second state, in which the at least one memory cell is connected to the different evaluation element, based on the error information.

A method for operating a memory device comprising a memory cell and a plurality of evaluation elements, wherein each evaluation element of the plurality of evaluation elements is connectable with the memory cell of the memory device and is configured to evaluate a physical parameter, of the memory cell, comprising at least one of a voltage at the memory cell, a potential at the memory cell, a current through the memory cell or an electrical resistance of the memory cell, the method comprising:

• connecting the memory cell to a first evaluation element but not a second evaluation element in a first state;
• obtaining, based on one or more first evaluations of one or more physical parameters of the memory cell, a first evaluation result, of the memory cell, using the first evaluation element;
• connecting the memory cell to the second evaluation element in a second state but not the first evaluation element;
• obtaining, based on one or more second evaluations of one or more physical parameters of the memory cell, a second evaluation result, of the memory cell, using the second evaluation element;
• determining a deviation between the first evaluation result and the second evaluation result to obtain a deviation information;
• and
• storing the deviation information in a memory.