Method of making decoupling capacitor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSzu-Lin Liu, Jaw-Juinn Horng
Life of this patent
Estimating the term…
Abstract
A method includes implanting a first dopant having a first dopant type into a substrate to define a plurality of source/drain (S/D) regions. The method further includes implanting a second dopant having the first dopant type into the substrate to define a channel region between adjacent S/D regions of the plurality of S/D regions, wherein a dopant concentration of the second dopant in the channel region is less than half of a dopant concentration of the first dopant in each of the plurality of S/D regions. The method further includes forming a gate stack over the channel region. The method further includes electrically coupling each of the plurality of S/D regions together.
Claims20
A method comprising:
- implanting a first dopant having a first dopant type into a substrate to define a plurality of source/drain (S/D) regions;
- implanting a second dopant having the first dopant type into the substrate to define a channel region between adjacent S/D regions of the plurality of S/D regions, wherein a dopant concentration of the second dopant in the channel region is less than half of a dopant concentration of the first dopant in each of the plurality of S/D regions;
- forming a gate stack over the channel region;
- and
- electrically coupling each of the plurality of S/D regions together.
A method comprising:
- implanting a first dopant into a substrate to form a plurality of source/drain (S/D) regions in the substrate;
- electrically coupling each of the plurality of S/D regions together;
- implanting a second dopant into the substrate to define a channel region, wherein the channel region is between adjacent S/D regions of the plurality of S/D regions, wherein the second dopant and the first dopant are p-type, and a concentration of the second dopant in the channel region is less than a concentration of the first dopant in each of the plurality of S/D regions;
- forming a gate stack over the channel region;
- and
- forming an n-well in the substrate, wherein the n-well extends under the channel region and the adjacent S/D regions of the plurality of S/D regions.
A method comprising:
- implanting a first dopant into a substrate to form a plurality of source/drain (S/D) regions in the substrate;
- implanting a second dopant into the substrate to define a channel region, wherein the channel region is between adjacent S/D regions of the plurality of S/D regions, wherein the second dopant and the first dopant are p-type, and a concentration of the second dopant in the channel region is less than a concentration of the first dopant in each of the plurality of S/D regions;
- implanting a third dopant into the substrate to define a lightly doped drain (LDD) region extending continuously under each of the plurality of S/D regions and under the channel region;
- and
- forming a gate stack over the channel region.
Dependencies are inferred from the claim text.