Dual-port SRAM structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon Jhy Liaw
Life of this patent
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Abstract
The static random access memory (SRAM) cell of the present disclosure includes a first pull-down device, a second pull-down device, a first pass-gate device, and a second pass-gate device in a first p-well on a substrate; a third pull-down device, a fourth pull-down device, a third pass-gate device, and a fourth pass-gate device in a second p-well on the substrate; a first pull-up device and a second pull-up device in an n-well between the first p-well and the second p-well; and a first landing pad between the second pull-down device and the first pull-up device. The first landing pad is electrically coupled to a gate structure of the second pass-gate device by way of a first gate via.
Claims20
A device structure, comprising:
- a substrate comprising an n-well disposed between a first p-well and a second p-well along a first direction;
- a first active region and a second active region disposed over the n-well and extending along a second direction perpendicular to the first direction;
- a third active region and a fourth active region disposed over the first p-well and extending along the second direction;
- a fifth active region and a sixth active region disposed over the second p-well and extending along the second direction;
- a first gate structure extending along the first direction to wrap over the third active region, the fourth active region, and the first active region;
- and
- a second gate structure extending along the first direction to wrap over the second active region, the fifth active region, and the sixth active region.
A device structure, comprising:
- a substrate comprising an n-well disposed between a first p-well and a second p-well along a first direction;
- a first active region and a second active region disposed over the n-well and extending along a second direction perpendicular to the first direction;
- a third active region and a fourth active region disposed over the first p-well and extending along the second direction;
- a fifth active region and a sixth active region disposed over the second p-well and extending along the second direction;
- a first gate structure disposed over the third active region;
- a second gate structure disposed over the fourth active region;
- a third gate structure disposed over the fifth active region;
- and
- a fourth gate structure disposed over the sixth active region,
- wherein the first gate structure and the fourth gate structure are electrically coupled together by way of a first word line disposed in a first metal layer,
- wherein the second gate structure and the fourth gate structure are electrically coupled together by way of a second word line disposed in a second metal layer different from the first metal layer.
A static random access memory (SRAM) cell comprising:
- a first pull-down device (PD-1), a second pull-down device (PD-2), a first pass-gate device (PG-1), and a second pass-gate device (PG-2) disposed in a first p-well on a substrate, wherein the first pass-gate device (PG-1) and the first pull-down device (PD-1) share a first active region extending along a first direction, wherein the second pass-gate device (PG-2) and the second pull-down device (PD-2) share a second active region extending along the first direction;
- a third pull-down device (PD-3), a fourth pull-down device (PD-4), a third pass-gate device (PG-3), and a fourth pass-gate device (PG-4) disposed in a second p-well on the substrate;
- and
- a first pull-up device (PU-1) and a second pull-up device (PU-2) disposed in an n-well disposed between the first p-well and the second p-well, where a third active region of the first pull-up device (PU-1) extends along the first direction,
- wherein a drain of the first pull-down device (PD-1), a drain of the second pull-down device (PD-2), and a drain the first pull-up device (PU-1) are electrically coupled together by way of a first long contact,
- wherein a source of the first pull-down device (PD-1) and a source of the second pull-down device (PD-2) are electrically coupled together by way of a second long contact.
Dependencies are inferred from the claim text.