Ion beam deposition target life enhancement
AssigneePlasma-Therm NES LLC
InventorsSarpangala Hariharakeshava Hegde, Vincent C. Lee, Wei-Hua Hsiao, Joseph Barraco
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Abstract
The present disclosure provides a method for increased target utilization within a sputtering system. A plurality of targets are provided wherein each target is operatively connected to a central axis. An ion beam is generated within the sputtering system. The generated ion beam is directed at a first location of a first target for a first time period. Each target is moved by rotating the central axis. The generated ion beam is directed at a second location of the first target for a second time period.
Claims20
A method for increased target utilization within a sputtering system comprising the steps of:
- providing a plurality of targets, each target of the plurality of targets is operatively connected to a target holder, each target of the plurality of targets is positioned along an outer portion of a generally circular pallet of the sputtering system, the circular pallet having a central axis;
- generating a first ion beam within the sputtering system;
- directing the first generated ion beam at a first location of a first target;
- discontinuing the generation of the first ion beam;
- rotating the central axis of the circular pallet;
- generating a second ion beam within the sputtering system;
- and
- directing the second generated ion beam at a second location of said first target.
A method for increased target utilization within a sputtering system comprising the steps of:
- providing a plurality of targets, each target of the plurality of targets is operatively connected to a target holder, each target of the plurality of targets is positioned along an outer portion of a generally circular pallet of the sputtering system, the circular pallet having a central axis;
- generating an ion beam within the sputtering system;
- directing the generated ion beam at a first location of a first target for a first time period;
- rotating the central axis of the circular pallet;
- and
- directing the generated ion beam at a second location of said first target for a second time period.
A method for increased target utilization within a sputtering system comprising the steps of:
- providing a plurality of targets, each target of the plurality of targets is operatively connected to a target holder, each target of the plurality of targets is positioned along an outer portion of a generally circular pallet of the sputtering system, the circular pallet having a central axis;
- generating an ion beam within the sputtering system;
- directing the generated ion beam at a first location of a first target;
- exposing a first substrate to sputtered material from said first location of said first target;
- rotating the central axis of the circular pallet;
- directing the generated ion beam at a second location of said first target;
- and
- exposing a second substrate to sputtered material from said second location of said first target.
Dependencies are inferred from the claim text.