Method for determining an electromagnetic field associated with a computational lithography mask model
AssigneeASML Netherlands B.V.
InventorsXingyue Peng, Jingjing Liu
Life of this patent
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AssigneeASML Netherlands B.V.
InventorsXingyue Peng, Jingjing Liu
Estimating the term…
A method for determining electromagnetic fields associated with a mask model of a patterning process. The method includes obtaining a mask stack region of interest and an interaction order corresponding to the mask stack region of interest. The mask stack region of interest is divided into sub regions. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The method includes generating one or more electromagnetic field determination expressions based on the Maxwell Equations and the Quantum Schrodinger Equation. The method includes determining an electromagnetic field associated with the mask stack region of interest based on the sub regions of the mask stack region of interest and the characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest, using the one or more electromagnetic field determination expressions.
A method for determining electromagnetic fields associated with a mask model of a patterning process, the method comprising:
A computer program product comprising a non-transitory computer readable medium having instructions therein, the instructions, when executed by a computer system, configured to cause the computer system to at least:
Dependencies are inferred from the claim text.