Method of forming vanadium nitride-containing layer

A method of forming a structure, the method comprising

• providing a substrate within a reaction chamber of a reactor;
• and
• using a first cyclical deposition process, depositing a vanadium nitride-containing layer onto a surface of the substrate to form a seed layer,
• wherein the first cyclical deposition process comprises:
• providing a vanadium precursor to the reaction chamber;
• and
• providing a nitrogen precursor to the reaction chamber;
• and
• after the seed layer is formed from the first cyclical deposition process, using a second cyclical deposition process to deposit a titanium nitride layer onto the seed layer.