Electrical contacting and method for producing an electrical contacting

A method for producing an electrical contacting between a surrounding wiring and a conductor region, the conductor region being situated in a conductor layer above an SOI wafer or SOI chip, a cover layer being situated above the conductor layer and below the surrounding wiring, the method comprising:

• in a first step, structuring the cover layer in such a way that a contacting region is formed that is insulated from the rest of the cover layer by a first configuration of recesses;
• in a second step, forming an opening at least in the contacting region;
• and
• in a third step, situating a metallic material in the opening, the metallic material connecting the surrounding wiring and the conductor region,
• wherein the conductor region is separated from a further conductor region by a second configuration of recesses, wherein the conductor region is insulated from the further conductor region by the second configuration of recesses.