Group 13 element nitride wafer with reduced variation in off-cut angle
AssigneeIv Works Co., Ltd.
InventorsVianney Leroux, Vincent Gelly, Nabil Nahas, Kevin Provost
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Abstract
The invention relates to a two-dimensional crystal wafer of group 13 or III element nitride which is delimited by a face of orientation N, an opposing face of orientation E depending on the group 13 or III element, E being selected preferably from Ga, In, Al or a combination of these elements, characterized in that the variation in crystalline off-cut angle in the largest dimension of said wafer is less than 5×10-3°/mm, and its curvature of geometric deformation of its faces exhibits a flexure in terms of absolute value of less than 10-3 mm/mm of the largest dimension of said wafer.
Claims18
Two-dimensional crystal wafer of group 13 or III element nitride, delimited by a face of orientation N, an opposite face of orientation E according to the group 13 or III element, E being chosen preferably from Ga, In, Al or a combination of these elements:
- wherein:
- the variation of the crystalline off-cut angle along the largest dimension of said wafer is less than 5×10−3°/mm, and
- its geometric curvature or deformation of its faces has a deflection less in absolute value than 10−3 mm/mm of the largest dimension of said wafer.
Dependencies are inferred from the claim text.