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US 11,886,109 B2Granted
EUV photo masks and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYun-Yue Lin
Life of this patent
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Abstract
A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The absorber layer includes one or more layers of an Ir based material, a Pt based material or a Ru based material.
Claims20
A reflective mask, comprising:
- a substrate;
- a reflective multilayer disposed over the substrate;
- a capping layer disposed over the reflective multilayer;
- an intermediate layer disposed over the capping layer;
- an absorber layer disposed over the intermediate layer;
- and
- a cover layer disposed over the absorber layer,
- wherein the absorber layer includes one or more layers of an Ir based material, a Pt based material or a Ru based material.
5 more elements
A reflective mask, comprising:
- a substrate;
- a reflective multilayer disposed over the substrate;
- a barrier layer disposed over the reflective multilayer;
- a capping layer disposed over the barrier layer;
- an intermediate layer disposed over the capping layer;
- an absorber layer disposed over the intermediate layer;
- and
- a cover layer disposed over the absorber layer,
- wherein the barrier layer includes one or more of silicon nitride, BC, BN, CN or graphene.
6 more elements
A reflective mask, comprising:
- a substrate;
- a first reflective multilayer disposed over the substrate;
- a first capping layer disposed over the first reflective multilayer;
- a first etch stop layer disposed over the first capping layer;
- a second reflective multilayer disposed over the first etch stop layer;
- a second capping layer disposed over the second reflective multilayer;
- a second etch stop layer disposed over the second capping layer;
- and
- an absorber layer disposed in a trench formed in the second etch stop layer, the second capping layer and the second reflective multilayer.
6 more elements
Dependencies are inferred from the claim text.