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US 11,885,037 B2Granted
Open Czochralski furnace for single crystal growth
AssigneeMeishan Boya Advanced Materials Co., Ltd.
InventorsYu Wang, Weiming Guan, Zhenxing Liang
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Abstract
The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a first drum; a second drum located inside the first drum; a filler filled in a space between the first drum and the second drum; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum; and a first cover plate mounted on a top of the temperature filed device and covering a top end of the first drum.
Claims20
A temperature field device for crystal growth, comprising:
- a first drum;
- a second drum located inside the first drum;
- a filler filled in a space between the first drum and the second drum;
- a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum;
- a first cover plate mounted on a top of the temperature field device and covering a top end of the first drum;
- an observation unit mounted on the first cover plate, wherein the observation unit includes a through hole opened on the observation unit, and the through hole is configured for gas passing;
- and
- a gas channel mounted on the observation unit, wherein a size of the gas channel is matched with a size of the through hole.
5 more elements
Dependencies are inferred from the claim text.