SiC multilayer body, production method therefor, and semiconductor device
AssigneeCusic Inc.
InventorHiroyuki Nagasawa
Life of this patent
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Abstract
According to one embodiment, a method of producing a SiC laminate having a hexagonal SiC layer and a 3C-SiC layer comprises: forming a seed plane parallel to a close-packed plane of the crystal lattice on the surface of the hexagonal SiC layer; providing an inclined plane, which is inclined with respect to the seed plane, to all faces adjacent to the seed plane; forming a two-dimensional nucleus of 3C-SiC on the seed plane; and epitaxially growing both the two-dimensional nucleus of 3C-SiC and the SiC layers exposed on the inclined plane simultaneously in a direction parallel to the close-packed plane of the crystal lattice.
Claims10
A SiC laminate, comprising:
- a single crystal hexagonal SiC layer;
- and
- a single crystal 3C-SiC layer overlaid on the hexagonal SiC layer, wherein
- the 3C-SiC layer does not contain a twin boundary,
- a heterointerface where the 3C-SiC layer and the hexagonal SiC layer meet is exactly parallel to close-packed planes (CPPs) of crystal lattices of the layers and is a lattice-matched coherent heterointerface,
- the coherent heterointerfaces is exposed on a main surface at an inclination angle of 0.5 degrees or more and less than 73 degrees, and
- a segment of the coherent heterointerface on the main surface is a polygon or a straight line with no endpoint and separates a hexagonal SiC surface and a 3C-SiC surface.
Dependencies are inferred from the claim text.