Integrated circuit device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Ying Chen, Lee-Chung Lu, Li-Chun Tien, Ta-Pen Guo
Life of this patent
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Abstract
An IC device includes a first active area extending away from a first endpoint in a first direction, a second active area extending away from a second endpoint in the first direction, a third active area positioned between the first and second active areas, and a gate structure perpendicular to the first through third active areas. The gate structure overlies each of the first and second endpoints and the third active area, and the third active area extends away from the gate structure in a second direction opposite the first direction.
Claims20
An integrated circuit (IC) device comprising:
- a plurality of active areas, the active areas of the plurality of active areas being parallel to each other;
- and
- a gate structure extending perpendicular to the plurality of active areas, the gate structure overlying each active area of the plurality of active areas,
- wherein
- a first active area of the plurality of active areas is between a second active area and a third active area of the plurality of active areas,
- the gate structure overlies an edge of the first active area and a portion of the first active area extending continuously to the edge of the first active area,
- the first active area extends in a first direction, and
- each of the second active area and the third active area extends away from the gate structure in a second direction opposite to the first direction.
An integrated circuit (IC) device comprising:
- first through third active areas extending in a first direction;
- and
- first and second gate structures arranged in parallel perpendicular to the first through third active areas,
- wherein
- the first and second gate structures are positioned at respective first and second gate structure locations along the first direction,
- each of the first and second active areas extends from the first gate structure location only along the first direction to the second gate structure location, and
- the third active area is positioned between the first and second active areas and extends across the first gate structure.
A method of manufacturing an integrated circuit (IC) device, the method comprising:
- forming a plurality of active areas, each active area of the plurality of active areas extending in a first direction;
- and
- fabricating a first gate structure extending in a second direction perpendicular to the first direction, the first gate structure overlying each active area of the plurality of active areas,
- wherein
- a first active area of the plurality of active areas is between a second active area of the plurality of active areas and a third active area of the plurality of active areas,
- the first active area of the plurality of active areas extends across the first gate structure, and
- the first gate structure overlies both an edge and a portion extending continuously to the edge of each of the second active area of the plurality of active areas and the third active area of the plurality of active areas.
Dependencies are inferred from the claim text.