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US 11,769,767 B2Granted
Diode triggered silicon controlled rectifier
AssigneeGlobalFoundries U.S. Inc.
InventorsSouvick Mitra, Robert J. Gauthier, Jr., Alain F. Loiseau, You Li, Tsung-Che Tsai
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to diode triggered Silicon controlled rectifiers and methods of manufacture. The structure includes a diode string comprising a first type of diodes and a second type of diode in bulk technology in series with the diode string of the first type of diodes.
Claims16
A structure comprising:
- a diode triggered silicon controlled rectifier (SCR) in bulk semiconductor material, the SCR comprising:
- a well of a first dopant type;
- a well of a second dopant type different than the well of the first dopant type;
- and
- alternating P+ regions and N+ regions in each of the respective wells of the first dopant type and the second dopant type and separated by shallow trench isolation regions.
2 more elements
A structure comprising:
- diode string without Darlington effect comprising alternating P+ regions and N+ regions;
- a single diode or string of diodes in bulk technology electrically connected to the diode string, wherein the diode string and the single diode or the string of diodes are in bulk technology, and
- a trench isolation structure isolating the single diode or string of diodes from the diode string;
- and
- a diode triggered silicon controlled rectifier (SCR) in the bulk technology, the SCR comprising the N-well, a P-well in the substrate material, and alternating P+ regions and N+ regions formed in each of the N-well and the P-well.
2 more elements
Dependencies are inferred from the claim text.