Method for reducing charging of semiconductor wafers

A method, comprising:

• depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate;
• patterning the photoresist layer;
• developing the photoresist layer by applying a tetramethylammonium hydroxide (TMAH) solution to the photoresist layer;
• cleaning the semiconductor substrate using deionized (DI) water to wash the tetramethylammonium hydroxide (TMAH) solution from the photoresist layer;
• and
• reapplying the tetramethylammonium hydroxide (TMAH) solution to the semiconductor substrate after cleaning with the first cleaning liquid to reduce charges accumulated in the semiconductor substrate.

A method, comprising:

• depositing photoresist on a silicon-on-insulator (SOI) wafer to form a photoresist layer on the silicon-on-insulator (SOI) wafer;
• patterning the photoresist layer;
• developing the photoresist layer by applying a 2.38% tetramethylammonium hydroxide (TMAH) solution to the photoresist layer;
• performing a first cleaning operation for cleaning the silicon-on-insulator (SOI) wafer with deionized (DI) water to wash the tetramethylammonium hydroxide (TMAH) solution from the photoresist layer;
• and
• reapplying the 2.38% tetramethylammonium hydroxide (TMAH) solution to the silicon-on-insulator (SOI) wafer after the first cleaning operation to reduce charges accumulated in an insulating layer of the silicon-on-insulator (SOI) wafer.