Focused ion beam processing apparatus
AssigneeHitachi High-Tech Science Corporation
InventorsHiroshi Oba, Yasuhiko Sugiyama, Yoshitomo Nakagawa, Koji Nagahara
Life of this patent
Estimating the term…
Loading patent…
AssigneeHitachi High-Tech Science Corporation
InventorsHiroshi Oba, Yasuhiko Sugiyama, Yoshitomo Nakagawa, Koji Nagahara
Estimating the term…
Provided is a focused ion beam processing apparatus including: an ion source; a sample stage a condenser lens; an aperture having a slit in a straight line shape; a projection lens and the sample stage, wherein, in a transfer mode, by Köhler illumination, with an applied voltage of the condenser lens when a focused ion beam is focused on a main surface of the projection lens scaled to be 100, the applied voltage is set to be less than 100 and greater than or equal to 80; a position of the aperture is set such that the focused ion beam is masked by the aperture with the one side of the aperture at a distance greater than 0 μm and equal to or less than 500 μm from a center of the focused ion beam; and the shape of the slit is transferred onto the sample.
A focused ion beam processing apparatus for processing a cross-section parallel to an irradiation direction of a focused ion beam with respect to a sample comprising:
Dependencies are inferred from the claim text.