Semiconductor device and method for fabricating the same

A semiconductor device, comprising:

• an element isolation region;
• a first active region that is bounded by the element isolation region and extends in a first direction, wherein the first active region includes a first part and a second part that are disposed at a first level, and a third part disposed at a second level located above the first level;
• and
• a second active region that is bounded by the element isolation region and extends in the first direction, wherein the second active region is spaced apart in a second direction different from the first active region wherein the second direction differs from the first direction, wherein the second active region includes a first and a second part that are disposed at the first level, and a third part disposed at the second level,
• wherein the second part of the first active region is spaced apart in the first direction from the first part of the first active region, and the third part of the first active region contacts each of the first part and the second part of the first active region,
• wherein the second part of the second active region is spaced apart in the first direction from the first part of the second active region, and the third part of the second active region contacts each of the first part and the second part of the second active region, and
• wherein a first width in the second direction of the element isolation region between the first part of the first active region and the second part of the second active region is greater than a second width in the second direction of the element isolation region between the third part of the first active region and the third part of the second active region.

A semiconductor device, comprising:

• an element isolation region;
• a first active region that is bounded by the element isolation region and extends in a first direction, wherein the first active region includes a first part and a second part, each disposed at a first level, a third part disposed at a second level located in a third direction above the first level, and a connection part that is disposed at the first level and that connects the first part of the first active region and the second part of the first active region;
• and
• a gate electrode disposed inside each of the element isolation region and the first active region and that extends in a second direction that differs from the first direction,
• wherein the third direction is perpendicular to a plane defined by the first direction and the second direction,
• wherein the second part of the first active region is spaced apart and separated in the first direction from the first part of the first active region, and the third part of the first active region contacts each of the first part and the second part of the first active region, and
• wherein a first width in the second direction of the first part of the first active region is less than a second width in the second direction of the third pan of the first active region, and is greater than a third width in the second direction of the connection part of the first active region.