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US 11,696,433 B2Granted
3D pitch multiplication
AssigneeApplied Materials, Inc.
InventorsNitin K. Ingle, Fredrick Fishburn
Life of this patent
Estimating the term…
Abstract
Memory devices and methods of manufacturing memory devices are provided. Described are devices and methods where 3D pitch multiplication decouples high aspect ratio etch width from cell width, creating small cell active area pitch to allow for small DRAM die size.
Claims17
A semiconductor memory device comprising:
- a first memory stack comprising alternating layers of a first material layer and a recessed second material layer on a first portion of the device, the first memory stack comprising a first active area having a first width and a first space, wherein the first material layer comprises silicon (Si) and the recessed second material layer comprises silicon germanium (SiGe);
- a second memory stack on a second portion of the device, the second memory stack comprising alternating layers of the first material layer and the recessed second material layer and comprising a second active area having a second width and a second space;
- and
- a high aspect ratio opening separating the first portion from the second portion;
- and
- a dielectric layer between the recessed second material layer and an adjacent second material layer, the dielectric layer separating the first material layer from an adjacent first material layer,
- wherein a pitch of the first active area and the second active area is in a range of from about 50 nm to about 80 nm.
4 more elements
A method of forming an electronic device, the method comprising:
- forming a memory stack comprising alternating layers of a first material layer and a second material layer;
- forming an opening in the memory stack;
- recessing the second material layer to form a gap and a recessed second material layer;
- growing a third material in the gap;
- and
- growing a fourth material in the gap adjacent to the third material to form an active area,
- wherein a pitch of the active area is in a range of from about 50 nm to about 100 nm.
4 more elements
A non-transitory computer readable medium including instructions, that, when executed by a controller of a processing system, causes the processing system to perform operations of:
- form a memory stack comprising alternating layers of a first material layer and a second material layer;
- form an opening in the memory stack;
- recess the second material layer to form a gap and a recessed second material layer;
- grow a third material in the gap;
- and
- grow a fourth material in the gap adjacent to the third material to form an active area,
- wherein a pitch of the active area is in a range of from about 50 nm to about 100 nm.
4 more elements
Dependencies are inferred from the claim text.