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US 11,696,431 B2Granted
Semiconductor memory device including a capacitor and method of forming the same
AssigneeMicron Technology, Inc.
InventorAkira Kaneko
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate, a lower electrode provided over the substrate, a capacitive insulating film, and an upper electrode provided over the lower electrode, wherein the lower electrode has an upper portion and a lower portion, and at a boundary between the upper portion and the lower portion, the diameter of the upper portion is smaller than the diameter of the lower portion.
Claims19
A semiconductor device comprising:
- a substrate;
- one or more lower electrodes over the substrate, each of the one or more lower electrode including an upper portion and a lower portion;
- a capacitive insulating film on the one or more lower electrodes;
- an upper electrode over the one or more lower electrodes;
- and
- one or more first beams and one or more second beams,
- wherein the diameter of the upper portion is smaller than the diameter of the lower portion,
- wherein the one or more second beams is disposed between the one or more first beams and an area adjacent the lower portions, and
- wherein each of the one or more first beams and each of the one or more second beams is disposed between adjacent upper portions of adjacent lower electrodes of the one or more lower electrodes.
6 more elements
A semiconductor device comprising:
- a substrate;
- one or more lower electrodes over the substrate, each of the one or more lower electrode including an upper portion and a lower portion;
- and
- one or more first beams and one or more second beams,
- wherein the upper portion comprises a diameter that is smaller than a diameter of the lower portion,
- wherein the one or more second beams is disposed between the one or more first beams and an area adjacent the lower portions, and
- wherein each of the one or more first beams and each of the one or more second beams is disposed between adjacent upper portions of adjacent lower electrodes of the one or more lower electrodes.
4 more elements
A semiconductor device comprising:
- a substrate;
- one or more memory cells, each memory cell including:
- a transistor disposed in the substrate;
- a capacitor contact on the substrate;
- and
- a capacitor comprising:
- a lower electrode over the capacitor contact, the lower electrode including an upper portion and a lower portion;
- a capacitive insulating film on the lower electrode;
- and
- a first beam and a second beam disposed between adjacent upper portions of adjacent lower electrodes, wherein the second beam is positioned between the first beam and an area adjacent the lower portion,
- an upper electrode over the lower electrode,
- wherein the diameter of the upper portion is smaller than the diameter of the lower portion.
9 more elements
Dependencies are inferred from the claim text.