Metal-insulator-metal capacitive structure and methods of fabricating thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsiang-Ku Shen, Ming-Hong Kao, Hui-Chi Chen, Dian-Hau Chen, Yen-Ming Chen
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Abstract
A metal-insulator-metal (MIM) capacitor structure includes a bottom electrode, a first oxide layer adjacent the bottom electrode, and a first high-k dielectric layer over the bottom electrode and the first oxide layer. A middle electrode is over the first high-k dielectric layer and a second oxide layer is adjacent the middle electrode. A second high-k dielectric layer may be over the middle electrode and the second oxide layer, a top electrode may be over the second high-k dielectric layer.
Claims20
A metal-insulator-metal (MIM) capacitor structure, comprising:
- a bottom electrode formed over a substrate;
- a first oxide layer coplanar with the bottom electrode, wherein the first oxide layer has a first thickness and the bottom electrode has a second thickness, the first thickness greater than the second thickness;
- a first high-k dielectric layer on the first oxide layer and the bottom electrode;
- a middle electrode over the first high-k dielectric layer;
- a second oxide layer coplanar with the middle electrode;
- a second high-k dielectric layer over the second oxide layer and the middle electrode;
- and
- a top electrode over the second high-k dielectric layer.
A semiconductor device, comprising:
- a metal-insulator-metal (MIM) capacitor disposed over a substrate, wherein the MIM capacitor includes:
- a first electrode;
- an oxide material layer adjacent the first electrode, wherein the oxide material layer has a second thickness and the first electrode has a first thickness, the second thickness greater than the first thickness;
- a high-k dielectric material having a different composition than the oxide material layer on a top surface of the first electrode and a top surface of the oxide material layer;
- and
- a second electrode over the high-k dielectric material.
A metal-insulator-metal (MIM) capacitor structure, comprising:
- a first silicon oxide layer adjacent and coplanar a bottom electrode formed over a substrate, wherein a bottom surface of the first silicon oxide layer is closer to the substrate than a bottom surface of the bottom electrode;
- a first high-k dielectric layer over the first silicon oxide layer and over the bottom electrode;
- a middle electrode over the first high-k dielectric layer;
- a second oxide layer adjacent to the middle electrode;
- a second high-k dielectric layer over the second oxide layer and over the middle electrode;
- and
- a top electrode over the second high-k dielectric layer.
Dependencies are inferred from the claim text.