Back to results
US 11,670,632 B2Granted
Thin film resistor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHung-Chih Yu, Chien-Mao Chen
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: a metal thin film disposed on a semiconductor substrate; and first and second contact structures disposed on the metal thin film, wherein the first and second contact structures are laterally spaced from each other by a dummy layer that comprises at least one polishing resistance material.
Claims20
A semiconductor device, comprising:
- a metal thin film disposed on a semiconductor substrate;
- at least one contact structure disposed on the metal thin film,
- a dummy layer disposed on the metal thin film, wherein the dummy layer comprises at least one polishing resistance material;
- and
- a transistor gate structure disposed adjacent to the at least one contact structure, wherein a material of the transistor gate structure is the same as the at least one polishing resistance material,
- wherein the at least one contact structure comprises first and second contact structures, and wherein the first and second contact structures have a p-type work function and the at least one polishing resistance material has an n-type work function and is laterally spaced apart from the first and second contact structures, respectively, by part of the dummy layer.
3 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- at least a first field-effect transistor (FET) disposed in a first region of the semiconductor substrate;
- and
- a thin film resistor disposed in a second region of the semiconductor substrate adjacent to the first region, the thin film resistor comprising:
- a thin film disposed on the semiconductor substrate;
- first and second contact structures disposed on respective ends of the thin film;
- a dummy layer disposed on the thin film and laterally between the first and second contact structures,
- wherein the dummy layer comprises at least one recessed region at least partially filled with a polishing resistance material;
- and
- a transistor gate structure disposed adjacent to the first contact structure, wherein a material of the transistor gate structure is the same as the polishing resistance material.
7 more elements
A method, comprising:
- forming a metal thin film in a resistor region on a semiconductor substrate;
- forming two contact structures on respective ends of the metal thin film, wherein the two contact structures are laterally spaced from each other by a dummy layer;
- forming a recessed region in the dummy layer, wherein the recessed region is laterally spaced apart from the two contact structures;
- filling the recessed region with a polishing resistance material, wherein the dummy layer and the polishing resistance material are disposed on the metal thin film between the first and second contact structures;
- and
- forming a transistor gate structure disposed adjacent to the first contact structure, wherein a material of the transistor gate structure is the same as the at least one polishing resistance material.
3 more elements
Dependencies are inferred from the claim text.