Thin-film resistor (TFR) module

A thin film resistor (TFR) module formed by a method comprising:

• forming a pair of heads spaced apart from each other;
• depositing a dielectric region over the pair of heads;
• forming an opening in the dielectric region, the opening extending over at least a partial width of each head of the pair of heads;
• depositing a TFR layer over the dielectric region and extending into the opening to define a cup-shaped TFR layer structure including (a) a laterally-extending TFR element base conductively connected to both heads and (b) vertical ridges extending upward from the laterally-extending TFR element base;
• and
• performing a high density plasma ridge removal process to remove or shorten the vertical ridges, wherein a high density plasma sputter etch forms inclined sidewalls on opposing sides of the opening.

A thin film resistor (TFR) module, comprising:

• a pair of spaced-apart heads;
• a TFR element including a laterally-extending TFR element base conductively connected to both heads to thereby define a conductive connection between the spaced-apart heads;
• a first dielectric region above the pair of heads;
• the first dielectric region having a pair of inclined sidewalls extending upwardly from respective edges of the TFR element;
• and
• a second dielectric region between the pair of inclined sidewalls of the first dielectric region;
• wherein the second dielectric region has at least one different material property than the first dielectric region.

A method for manufacturing a thin film resistor (TFR) module, the method comprising:

• forming a pair of heads spaced apart from each other;
• depositing a dielectric region over the pair of heads;
• forming an opening in the dielectric region, the opening extending over at least a partial width of each head of the pair of heads;
• depositing a TFR layer over the dielectric region and extending into the opening to define a cup-shaped TFR layer structure including (a) a laterally-extending TFR element base conductively connected to both heads and (b) vertical ridges extending upwardly from the laterally-extending TFR element base;
• and
• performing a high density plasma ridge removal process to remove a full height of the vertical ridges from the cup-shaped TFR layer structure, thereby defining a TFR element having removed or shorted vertical ridges.

A method for manufacturing a thin film resistor (TFR) module, the method comprising:

• forming a pair of heads spaced apart from each other;
• depositing a first dielectric region over the pair of heads;
• forming an opening in the first dielectric region, the opening extending over at least a partial width of each head of the pair of heads;
• depositing a TFR layer over the dielectric region and extending into the opening to define a cup-shaped TFR layer structure including (a) a laterally-extending TFR element base conductively connected to both heads and (b) vertical ridges extending upwardly from the laterally-extending TFR element base;
• performing a high density plasma ridge removal process to remove or shorten the vertical ridges from the cup-shaped TFR layer structure, thereby defining a TFR element having removed or shorted vertical ridges, the high density plasma ridge removal process expanding the opening in the first dielectric region;
• and
• filling the expanded opening in the first dielectric region with a second dielectric region, wherein the second dielectric region has at least one different material property than the first dielectric region.