Vertical transistors

A vertical transistor comprising:

• a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region, the top source/drain region and the channel region having a top interface, the bottom source/drain region and the channel region having a bottom interface;
• the channel region being crystalline and having an average crystal grain size of its crystal grains from 5 nanometers to 10 nanometers;
• and
• the channel region at the top interface having greater horizontal texture than volume of the crystal grains in the channel region that is vertically between the crystal grains that are at the top and bottom interfaces.

A vertical transistor comprising:

• a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region, the top source/drain region and the channel region having a top interface, the bottom source/drain region and the channel region having a bottom interface;
• the channel region being crystalline and having an average crystal grain size of its crystal grains from 5 nanometers to 10 nanometers;
• and
• the channel region at the bottom interface having greater horizontal texture than volume of the crystal grains in the channel region that is vertically between the crystal grains that are at the top and bottom interfaces.

A vertical transistor comprising:

• a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region, the top source/drain region and the channel region having a top interface, the bottom source/drain region and the channel region having a bottom interface;
• the channel region being crystalline and having an average crystal grain size of its crystal grains that is from 5 nanometers to 10 nanometers;
• and
• at least some of the crystal grains in the channel region at the top interface, at least some of the crystal grains in the channel region at the bottom interface, and at least some of the crystal grains of the channel region that are vertically between the crystal grains that are at the top and bottom interfaces having horizontal texture;
• the channel region at the top and bottom interfaces having greater horizontal texture than volume of the crystal grains that are vertically between the crystal grains that are at the top and bottom interfaces.