Thermal reflector device for semiconductor fabrication tool

A method, comprising:

• providing a system that includes a susceptor configured to retain a semiconductor substrate, a reflector, and a heating element extending through an outer portion of the reflector toward an inner portion of the reflector, wherein the heating element is in direct contact with the outer portion of the reflector, wherein the inner portion of the reflector includes a textured region having a plurality of circumferential ridges, and wherein a trough-to-trough width defining separation between adjacent circumferential ridges varies from top of the inner portion to bottom of the inner portion;
• heating the semiconductor substrate, wherein the heating includes directing more rays of thermal energy released by the heating element toward an edge of the semiconductor substrate than a center of the semiconductor substrate;
• and
• performing an epitaxy process on the heated semiconductor substrate.

A method, comprising:

• providing a system that includes a susceptor configured to retain a semiconductor substrate and a reflector integrated with a heating element, wherein the reflector includes an outer portion and an inner portion disposed within the outer portion, wherein the inner portion has a frustoconical segment having a wider end and a narrower end opposite to the wider end, wherein the wider end is closer to the semiconductor substrate than the narrower end, wherein the heating element is disposed outside the frustoconical segment and between the inner portion and the outer portion, wherein the reflector includes a textured surface having a plurality of circumferential ridges, and wherein a separation distance between adjacent ridges varies along a height of the reflector;
• emitting thermal energy from the heating element toward the textured surface of the reflector;
• non-uniformly reflecting the thermal energy from the textured surface onto the semiconductor substrate to heat the semiconductor substrate, such that more thermal energy is reflected onto a circumferential region of the semiconductor substrate than a central region of the semiconductor substrate;
• and
• applying a precursor gas to the heated semiconductor substrate, thereby forming an epitaxial layer.