Back to results
US 11,629,433 B2Granted
SiC single crystal production apparatus
AssigneeShowa Denko K.K.
InventorTomoya Utashiro
Life of this patent
Estimating the term…
Abstract
The invention provides a SiC single crystal production apparatus with high uniformity of temperature distribution in a crystal growth vessel. The SiC single crystal production apparatus includes a crystal growth vessel containing SiC raw material; an insulation part covering the periphery of the crystal growth vessel; a heater used to heat the crystal growth vessel; and a holding member used to hold the crystal growth vessel, wherein the crystal growth vessel is held in a suspended state by the holding member.
Claims2
A SiC single crystal production apparatus, comprising:
- a crystal growth vessel containing a SiC raw material;
- an insulation part covering the periphery of the crystal growth vessel;
- a heater used to heat the crystal growth vessel;
- and
- a holding member used to hold the crystal growth vessel,
- wherein the holding member comprises;
- a pedestal;
- two struts fixed to the pedestal;
- a first end of a projection being provided in the strut, and
- a second end of the projection engaging a central portion of a side surface of the crystal growth vessel so as to hold the crystal growth vessel in a floating state from the pedestal and thereby allow the crystal growth vessel to move freely, and
- wherein the heater is located more outside the crystal growth vessel than the holding member, and
- the heater is located more outside the crystal growth vessel than the insulation part.
9 more elements
Dependencies are inferred from the claim text.