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US 11,610,758 B2Granted
Charged particle beam lithography system
AssigneeKkt Holdings Syndicate
InventorsTzu-Yi Kuo, Yu-Kuang Tseng
Life of this patent
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Abstract
A collimated electron beam is illuminated to a grounded metal mask such that patterns on the mask can be transferred to a substrate identically. In a preferred embodiment, a linear electron source can be provided for enhancing lithographic throughput. The metal mask is adjacent to the substrate, but does not contact with substrate.
Claims18
A lithography apparatus for lithographying a photoresist layer on a substrate, comprising:
- a charged particle source for providing a charged particle beam;
- a charged particle optical element for collimating the charged particle beam into a collimated unfocused charged particle beam, wherein said collimated unfocused charged particle beam is to applied onto said photoresist layer on said substrate;
- a grounded metallic mask positioned above said photoresist layer on the substrate without contacting said photoresist layer;
- and
- a first stage for mounting the sample and a second stage for mounting the grounded metallic mask, wherein said first stage and said second stage move along a first direction, such that the unfocused charged particle beam scans on the sample;
- wherein said metallic mask includes at least a pattern for blocking a portion of said collimated unfocused charged particle beam before said collimated charged particle beam arrived at said photoresist layer on said substrate;
- and
- wherein the sample is mounted on a transparent substrate for mounting the sample, the transparent substrate is coated with a phosphor layer, a sensor array is provided for receiving excited light from the phosphor layer, and an optical element is provided for projecting said excited light to said sensor array.
5 more elements
A lithography apparatus for lithographying a photoresist layer on a substrate, comprising:
- a charged particle source for providing a charged particle beam;
- a charged particle optical element for collimating the charged particle beam into a collimated charged particle beam, wherein said collimated charged particle beam is to applied onto said photoresist layer on said substrate, wherein the charged particle optical element includes a linear condenser lens to focus the charged particle beam in a first direction and collimate the charged particle beam in a second direction perpendicular to the first direction;
- and
- a grounded metallic mask positioned above said photoresist layer on the substrate without contacting said photoresist layer;
- wherein said metallic mask includes at least a pattern for blocking a portion of said collimated charged particle beam before said collimated charged particle beam arrived at said photoresist layer on said substrate.
2 more elements
An electron beam lithography apparatus, comprising:
- an electron source providing an electron beam;
- a condenser lens for condensing the electron beam;
- a linear condensing lens, below said condenser lens, for focusing the electron beam in a first direction and collimating the electron beam in a second direction orthogonal to the first direction, wherein the first direction and the second direction are linear collimating the electron beam along a first direction parallel to a sample;
- a grounded metallic mask between said linear condensing lens and the sample, close to a photoresist layer on the sample without contacting the photoresist layer,
- wherein said metallic mask includes at least a pattern such that a portion of the electron beam is blocked by said metallic mask;
- and
- a maglev stage for mounting the sample and moving in a second direction perpendicular to the first direction.
4 more elements
Dependencies are inferred from the claim text.