Optical proximity correction method and method of fabricating mask including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSoo Yong Lee, Seo Rim Moon, Kyung Jae Park, Soo Ryong Lee, Kang-Min Jung
Life of this patent
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Abstract
An optical proximity correction method includes extracting first patterns from a pattern mask, performing lithography on at least a part of the first patterns to form first-first patterns, forming the first-first patterns at positions where the first patterns are formed, and performing correction on the pattern mask on which the first-first patterns are formed.
Claims18
An optical proximity correction method performed by code or instructions to be executed by a computer, the method comprising:
- extracting only first patterns from a pattern mask, the first patterns being a subset of unique repeated patterns of all patterns of the pattern mask;
- analyzing and compressing an area of the extracted first patterns;
- performing lithography only on the extracted first patterns with the compressed area among all patterns in the pattern mask to form first-first patterns;
- forming the first-first patterns in the pattern mask at positions where the first patterns were formed, such that the pattern mask includes the first-first patterns among non-extracted patterns;
- performing correction on the pattern mask including the first-first patterns among non-extracted patterns;
- and
- checking whether patterns of the pattern mask violate a mask rule check.
An optical proximity correction method performed by code or instructions to be executed by a computer, the method comprising:
- extracting only first patterns and second patterns from a pattern mask, the first and second patterns being subsets of unique repeated patterns of all patterns of the pattern mask;
- analyzing and compressing areas of the extracted first and second patterns;
- performing lithography only on the extracted first and second patterns with the compressed areas among all patterns in the pattern mask to form first-first patterns and second-first patterns, respectively;
- forming the first-first patterns in the pattern mask at positions where the first patterns were formed;
- forming the second-first patterns in the pattern mask at positions where the second patterns were formed;
- performing correction on the pattern mask including the first-first patterns and the second-first patterns among non-extracted patterns;
- and
- checking whether patterns of the pattern mask violate a mask rule check.
A method of fabricating a mask comprising:
- producing a pattern mask with a designed layout;
- performing lithography only on first patterns in the pattern mask to form first-first patterns, the first patterns being a subset of unique repeated patterns having compressed area of all patterns of the pattern mask;
- forming the first-first patterns in the pattern mask at positions where the first patterns were formed, such that the pattern mask includes the first-first patterns among non-lithographed patterns;
- performing a correction on the pattern mask including the first-first patterns among non-extracted patterns to correct an optical proximity effect, the correction being performed by code or instructions to be executed by a computer;
- checking whether patterns of the pattern mask violate a mask rule check;
- and
- performing a mask tape-out (MTO) on the pattern mask in which the optical proximity effect has been corrected.
Dependencies are inferred from the claim text.