Device for pulling a single crystal of semiconductor material out of a melt using the CZ method, and method using the device

An apparatus for pulling a single crystal of semiconductor material by the Czochralski (CZ) method from a melt, the apparatus comprising:

• a crucible configured to accommodate the melt;
• a resistance heater arranged around the crucible;
• a camera system for observing a phase boundary between the melt and a growing single crystal, where the camera system has an optical axis;
• a heat shield in frustoconical form with a narrowing diameter in a region of a lower end of the heat shield and arranged above the crucible and surrounding the growing single crystal;
• and
• an annular element, which is configured to capture particles, that projects inward from an inner side face of the heat shield and has an arrestor edge directed upward at an inner end of the annular element,
• wherein the optical axis of the camera system runs between the arrestor edge and the growing single crystal, and
• wherein the annular element is releasably connected to the heat shield and consists of a same material as the inner side face of the heat shield.