Circuit board and production method therefor, and electronic device and production method therefor

A circuit board comprising:

• a metal wiring arrangement portion and a metal wiring non-arrangement portion, wherein,
• in the metal wiring arrangement portion, metal wiring, a first diffusion layer, and a first organic insulating layer are stacked with each other, and the metal wiring and the first organic insulating layer are disposed at each end in a stacking direction of the metal wiring and the first organic insulating layer,
• in the metal wiring non-arrangement portion, a metal oxide layer, a second diffusion layer, and a second organic insulating layer are stacked with each other, and the metal oxide layer and the second organic insulating layer are disposed at each end in a stacking direction of the metal oxide layer and the second organic insulating layer,
• the metal wiring includes a first metal element,
• the first diffusion layer includes the first metal element and a second metal element,
• the metal oxide layer includes an oxide of the second metal element,
• the second diffusion layer includes the second metal element,
• the first metal element is one or more elements selected from the group consisting of Cu, Ag, and Ni, and
• the second metal element is one or more elements selected from the group consisting of Mn, Cr, V, Nb, Ta, Ti, and Zr.

A circuit board comprising:

• a metal wiring arrangement portion and a metal wiring non-arrangement portion, wherein,
• in the metal wiring arrangement portion, metal wiring, a first diffusion layer, and a first organic insulating layer are stacked with each other, and the metal wiring and the first organic insulating layer are disposed at each end in a stacking direction of the metal wiring and the first organic insulating layer,
• in the metal wiring non-arrangement portion, a metal oxide layer, a second diffusion layer, and a second organic insulating layer are stacked with each other, and the metal oxide layer and the second organic insulating layer are disposed at each end in a stacking direction of the metal oxide layer and the second organic insulating layer,
• an average thickness of the first diffusion layer is greater than an average thickness of the second diffusion layer,
• the metal wiring includes a first metal element,
• the first diffusion layer includes the first metal element and a second metal element,
• the metal oxide layer includes an oxide of the second metal element,
• the second diffusion layer includes the second metal element, and
• the second metal element has a stronger oxide-forming tendency than that of the first metal element.

An electronic device comprising:

• a metal wiring arrangement portion, a metal wiring non-arrangement portion, and at least one electronic component selected from a passive component and an active component, wherein,
• in the metal wiring arrangement portion, metal wiring, a first diffusion layer, and a first organic insulating layer are stacked with each other, and the metal wiring and the first organic insulating layer are disposed at each end in a stacking direction of the metal wiring and the first organic insulating layer,
• in the metal wiring non-arrangement portion, a metal oxide layer, a second diffusion layer, and a second organic insulating layer are stacked with each other, and the metal oxide layer and the second organic insulating layer are disposed at each end in a stacking direction of the metal oxide layer and the second organic insulating layer,
• the metal wiring includes a first metal element,
• the first diffusion layer includes the first metal element and a second metal element,
• the metal oxide layer includes an oxide of a second metal element,
• the second diffusion layer includes the second metal element,
• the second metal element has a stronger oxide-forming tendency than that of the first metal element, and
• the at least one electronic component is connected to the metal wiring.

An electronic device comprising:

• a metal wiring arrangement portion, a metal wiring non-arrangement portion, and at least one electronic component selected from a passive component and an active component, wherein,
• in the metal wiring arrangement portion, metal wiring, a first diffusion layer, and a first organic insulating layer are stacked with each other, and the metal wiring and the first organic insulating layer are disposed at each end in a stacking direction of the metal wiring and the first organic insulating layer,
• in the metal wiring non-arrangement portion, a metal oxide layer, a second diffusion layer, and a second organic insulating layer are stacked with each other, and the metal oxide layer and the second organic insulating layer are disposed at each end in a stacking direction of
• the metal oxide layer and the second organic insulating layer,
• the metal wiring includes a first metal element,
• the first diffusion layer includes the first metal element and a second metal element,
• the metal oxide layer includes an oxide of the second metal element,
• the second diffusion layer includes the second metal element,
• the first metal element is one or more elements selected from the group consisting of Cu, Ag, and Ni,
• the second metal element is one or more elements selected from the group consisting of Mn, Cr, V, Nb, Ta, Ti, and Zr, and
• the at least one electronic component is connected to the metal wiring.

An electronic device comprising:

• a metal wiring arrangement portion, a metal wiring non-arrangement portion, and at least one electronic component selected from a passive component and an active component, wherein,
• in the metal wiring arrangement portion, metal wiring, a first diffusion layer, and a first organic insulating layer are stacked with each other, and the metal wiring and the first organic insulating layer are disposed at each end in a stacking direction of the metal wiring and the first organic insulating layer,
• in the metal wiring non-arrangement portion, a metal oxide layer, a second diffusion layer, and a second organic insulating layer are stacked with each other, and the metal oxide layer and the second organic insulating layer are disposed at each end in a stacking direction of the metal oxide layer and the second organic insulating layer,
• an average thickness of the first diffusion layer is greater than an average thickness of the second diffusion layer,
• the metal wiring includes a first metal element,
• the first diffusion layer includes the first metal element and a second metal element,
• the metal oxide layer includes an oxide of the second metal element,
• the second diffusion layer includes the second metal element,
• the second metal element has a stronger oxide-forming tendency than that of the first metal element, and
• the at least one electronic component is connected to the metal wiring.