Stacked transistors with dielectric between channels of different device strata

An integrated circuit (IC) structure, comprising:

• a first device stratum including a first channel material and a first gate metal;
• a second device stratum including a second channel material and a second gate metal, wherein the second channel material is above and aligned with the first channel material;
• and
• a dielectric material between the first channel material and the second channel material, wherein the dielectric material is surrounded by a gate metal along a cross-section perpendicular to a longitudinal axis of the first channel material, and the gate metal includes the first gate metal or the second gate metal.