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US 11,538,919 B2Granted
Transistors and arrays of elevationally-extending strings of memory cells
AssigneeMicron Technology, Inc.
InventorsRamanathan Gandhi, Augusto Benvenuti, Giovanni Maria Paolucci
Life of this patent
Estimating the term…
Abstract
A transistor comprises a channel region having a frontside and a backside. A gate is adjacent the frontside of the channel region with a gate insulator being between the gate and the channel region. Insulating material having net negative charge is adjacent the backside of the channel region. The insulating material comprises at least one of AlxFy, HfAlxFy, AlOxNy, and HfAlxOyNz, where “x”, “y”, and “z” are each greater than zero. Other embodiments and aspects are disclosed.
Claims20
A transistor comprising:
- a channel region having a frontside and a backside;
- a gate adjacent the frontside of the channel region with a gate insulator being between the gate and the channel region;
- a charge-blocking region adjacent the gate;
- charge-storage material adjacent the charge-blocking region, the gate insulator being between the channel region and the charge-storage material;
- insulating material having net negative charge adjacent the backside of the channel region, the insulating material comprising at least one of AlxFy, HfAlxFy, AlOxNy, and HfAlxOyNz, where “x”, “y”, and “z” are each greater than zero.
2 more elements
Dependencies are inferred from the claim text.