Wiring structure and semiconductor device

A semiconductor device comprising a semiconductor element, a wiring structure, and a circuit, wherein the wiring structure includes a conductor containing a thin film of an intermetallic compound and an insulator layer and connects the semiconductor element and the circuit to each other,

• wherein the intermetallic compound contains a first metal element and a second metal element with an atomic ratio of the first metal element:second metal element in a range from 48.5:51.5 to 51.5:48.5 or from 30:70 to 37:63 so that the wiring structure exhibits excellent conductivity and good adhesion property between the intermetallic compound and the insulator layer which directly and physically contact each other without a diffusion barrier layer interposed therebetween,
• wherein the first metal element is one or more kinds selected from the group consisting of Fe, Co, Ni, Cu, and Zn, and the second metal element is one or more kinds selected from the group consisting of Al and Sb, and
• wherein a metal oxide layer formed by bonding at least the second metal element with oxygen is interposed between the conductor and the insulator layer.