Semiconductor device including data storage pattern

A semiconductor device comprising:

• a first conductive line disposed on a substrate and extending in a first direction;
• a second conductive line disposed on the first conductive line and extending in a second direction;
• a first data storage structure disposed between the first conductive line and the second conductive line;
• a third conductive line disposed on the second conductive line and extending in the first direction;
• and
• a second data storage structure disposed between the second conductive line and the third conductive line,
• wherein the first data storage structure comprises a first electrode, a first data storage pattern, a second electrode, a second data storage pattern, a third electrode, a third data storage pattern, a fourth electrode, a fourth data storage pattern, and a fifth electrode, stacked sequentially,
• wherein the first electrode, the second electrode, the third electrode, the fourth electrode, and the fifth electrode have different specific resistivities,
• wherein the second data storage structure comprises a sixth electrode, a sixth data storage pattern, a seventh electrode, a seventh data storage pattern, an eighth electrode, an eighth data storage pattern, a ninth electrode, a ninth data storage pattern and a tenth electrode disposed sequentially, and
• wherein the sixth electrode, the seventh electrode, the eighth electrode, the ninth electrode, and the tenth electrode have different specific resistivities.