EUV chamber apparatus, extreme ultraviolet light generation system, and electronic device manufacturing method

An electronic device manufacturing method comprising, in an extreme ultraviolet light generation system including

• a chamber,
• a target generation unit configured to output a target toward a predetermined region inside the chamber,
• a laser apparatus configured to irradiate the target with a pulse laser beam to generate plasma from the target,
• an EUV light condensing mirror disposed inside the chamber,
• a gas nozzle through which gas is supplied into the chamber, and
• a shroud including a first flow path through which a first cooling medium circulates and surrounding at least part of a trajectory of the target inside the chamber, wherein the first flow path includes a first part positioned close to the EUV light condensing mirror and a second part positioned farther from the EUV light condensing mirror than the first part, the first part being positioned upstream of the second part:
• irradiating the target with the pulse laser beam to generate extreme ultraviolet light;
• outputting the extreme ultraviolet light to an exposure apparatus;
• and
• exposing a photosensitive substrate to the extreme ultraviolet light in the exposure apparatus to manufacture an electronic device.

An EUV chamber apparatus comprising:

• a chamber;
• a target generation unit configured to output a target toward a predetermined region inside the chamber;
• a gas nozzle through which gas is supplied into the chamber;
• a shroud including a first flow path through which a first cooling medium circulates and surrounding at least part of a trajectory of the target inside the chamber;
• a temperature sensor configured to measure a temperature of the shroud;
• a first temperature adjustment device configured to adjust a temperature of the first cooling medium;
• and
• a control unit configured to control the first temperature adjustment device based on an output from the temperature sensor.

An extreme ultraviolet light generation system comprising:

• a chamber;
• a target generation unit configured to output a target toward a predetermined region inside the chamber;
• a laser apparatus configured to irradiate the target with a pulse laser beam to generate plasma from the target;
• an EUV light condensing mirror disposed inside the chamber;
• a gas nozzle through which gas is supplied into the chamber;
• and
• a shroud including a first flow path through which a first cooling medium circulates and surrounding at least part of a trajectory of the target inside the chamber,
• wherein the first flow path includes a first part positioned close to the EUV light condensing mirror and a second part positioned farther from the EUV light condensing mirror than the first part, the first part being positioned upstream of the second part.