Solid-state imaging device and method of controlling solid-state imaging device

A method of controlling a solid-state imaging device, the method comprising:

• applying, to at least one of a first electrode of the solid-state imaging device or a second electrode of the solid-state imaging device, a first voltage during a charge accumulation period and a second voltage during a charge non-accumulation period, wherein
• the first voltage is different from the second voltage,
• the first electrode includes a plurality of electrodes,
• the plurality of electrodes includes a charge readout electrode, an accumulation electrode, and a discharge electrode,
• the second electrode is opposite to the first electrode, and
• a photoelectric conversion layer is between the first electrode and the second electrode.

A solid-state imaging device, comprising:

• a first electrode including a plurality of electrodes;
• a second electrode opposite to the first electrode;
• a photoelectric conversion layer between the first electrode and the second electrode;
• a voltage applier configured to apply, to at least one of the first electrode or the second electrode, a first voltage during a charge accumulation period and a second voltage during a charge non-accumulation period, wherein the first voltage is different from the second voltage;
• a semiconductor substrate;
• an inorganic photoelectric transducer in the semiconductor substrate;
• and
• an organic photoelectric transducer on the inorganic photoelectric transducer and a surface side of the semiconductor substrate, wherein
• the organic photoelectric transducer includes the photoelectric conversion layer, and
• the inorganic photoelectric transducer is configured to perform photoelectric conversion in a different wavelength band from the organic photoelectric transducer.