Suppression of spurious signals in surface acoustic wave devices
AssigneeSkyworks Solutions, Inc.
InventorsRiho Sasaki, Joji Fujiwara
Life of this patent
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Abstract
An acoustic wave device comprises a substrate including a piezoelectric material, interdigital transducer (IDT) electrodes disposed on an upper surface of the substrate. The IDT electrodes having gap regions, edge regions, and center regions. A duty factor of the IDT electrodes in the edge regions is greater than the duty factor of the IDT electrodes in the center regions. A first dielectric film is disposed above the IDT electrodes and an upper surface of the substrate. The first dielectric film has a greater thickness in portions of the center regions than in portions proximate the gap regions.
Claims19
An acoustic wave device comprising:
- a substrate including a piezoelectric material;
- interdigital transducer (IDT) electrodes disposed on an upper surface of the substrate, the IDT electrodes having gap regions, edge regions, and center regions, a duty factor of the IDT electrodes in the edge regions being greater than a duty factor of the IDT electrodes in the center regions;
- a first dielectric film disposed above the IDT electrodes and an upper surface of the substrate, the first dielectric film having a greater thickness in portions of the center regions than in portions proximate the gap regions;
- and
- a second dielectric film disposed between the first dielectric film and the IDT electrodes, the second dielectric film exhibiting a lower acoustic velocity than the first dielectric film.
An acoustic wave device comprising:
- a substrate including a piezoelectric material;
- interdigital transducer (IDT) electrodes disposed on an upper surface of the substrate, the IDT electrodes having gap regions, edge regions, and center regions, a width of the IDT electrodes in the gap regions being less than a width of the IDT electrodes in the center regions;
- and
- dummy IDT electrodes disposed in the gap regions.
An acoustic wave device comprising:
- a substrate including a piezoelectric material;
- interdigital transducer (IDT) electrodes disposed on an upper surface of the substrate, the IDT electrodes having gap regions, edge regions, and center regions, a duty factor of the IDT electrodes in the edge regions being greater than a duty factor of the IDT electrodes in the center regions;
- and
- a first dielectric film disposed above the IDT electrodes and an upper surface of the substrate, the first dielectric film having a greater thickness in portions of the center regions than in portions proximate the gap regions, the first dielectric film having a greater thickness in the center regions and portions of the edge regions proximate the center regions than in portions of the edge regions distal to the center regions, lengths of the portions of the edge regions proximate the center regions being at least as long as lengths of the portions of the edge regions distal to the center regions.
An acoustic wave device comprising:
- a substrate including a piezoelectric material;
- interdigital transducer (IDT) electrodes disposed on an upper surface of the substrate, the IDT electrodes having gap regions, edge regions, and center regions, a duty factor of the IDT electrodes in the edge regions being greater than a duty factor of the IDT electrodes in the center regions, widths of the IDT electrodes in the gap regions being less than the widths of the IDT electrodes in the center regions;
- a first dielectric film disposed above the IDT electrodes and an upper surface of the substrate, the first dielectric film having a greater thickness in portions of the center regions than in portions proximate the gap regions.
An acoustic wave device comprising:
- a substrate including a piezoelectric material;
- interdigital transducer (IDT) electrodes disposed on an upper surface of the substrate, the IDT electrodes having gap regions, edge regions, and center regions, a duty factor of the IDT electrodes in the edge regions being greater than a duty factor of the IDT electrodes in the center regions;
- a first dielectric film disposed above the IDT electrodes and an upper surface of the substrate, the first dielectric film having a greater thickness in portions of the center regions than in portions proximate the gap regions;
- and
- dummy IDT electrodes disposed in the gap regions, a duty factor of the dummy IDT electrodes being different from the duty factor of the IDT electrodes in the center regions and different from the duty factor of the IDT electrodes in the edge regions.
An acoustic wave device comprising:
- a substrate including a piezoelectric material;
- interdigital transducer (IDT) electrodes disposed on an upper surface of the substrate, the IDT electrodes having gap regions, edge regions, and center regions, a duty factor of the IDT electrodes in the edge regions being greater than a duty factor of the IDT electrodes in the center regions;
- and
- a first dielectric film disposed above the IDT electrodes and an upper surface of the substrate, the first dielectric film having a greater thickness in portions of the center regions than in portions proximate the gap regions, the first dielectric film having a greater thickness in the center regions and portions of the edge regions proximate the center regions than in portions of the edge regions distal to the center regions, lengths of the portions of the edge regions proximate the center regions being less than lengths of the portions of the edge regions distal to the center regions.
Dependencies are inferred from the claim text.