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US 11,444,455 B2Granted
Integrated circuit protection
OwnerEugene Robert Worleyinventor
Life of this patent
Estimating the term…
Abstract
In certain aspects of the disclosure, a protection circuit includes a first input/output (I/O) pin, a second I/O pad, a shunt clamp coupled to the first I/O pad, and a resistor coupled between the shunt clamp and the second I/O pad. The resistor has a first dynamic resistance at a voltage of 100 millivolts across the resistor, the resistor has a second dynamic resistance at a voltage of three volts across the resistor, and the second dynamic resistance is at least five times greater than the first dynamic resistance.
Claims16
A system, comprising:
- a shunt clamp;
- an integrated circuit;
- and
- a resistor coupled between the shunt clamp and the integrated circuit, wherein the resistor has a first dynamic resistance at a voltage of 100 millivolts across the resistor, the resistor has a second dynamic resistance at a voltage of three volts across the resistor, the second dynamic resistance is at least five times greater than the first dynamic resistance, and the resistor comprises:
- a first N+ region on a substrate;
- a second N+ region on the substrate;
- and
- an N-well on the substrate, wherein at least a portion of the N-well is disposed between the first N+ region and the second N+ region, and a depth of the N-well is less than a depth of the first N+ region and less than a depth of the second N+ region.
5 more elements
An electrostatic discharge (ESD) protection circuit, comprising:
- a first input/output (I/O) pin;
- a second I/O pin;
- a shunt clamp coupled to the first I/O pin;
- and
- a resistor coupled between the shunt clamp and the second I/O pin, wherein the resistor has a first dynamic resistance at a voltage of 100 millivolts across the resistor, the resistor has a second dynamic resistance at a voltage of three volts across the resistor, the second dynamic resistance is at least five times greater than the first dynamic resistance, and the resistor comprises:
- a first N+ region on a substrate;
- a second N+ region on the substrate;
- and
- an N-well on the substrate, wherein at least a portion of the N-well is disposed between the first N+ region and the second N+ region, and a depth of the N-well is less than a depth of the first N+ region and less than a depth of the second N+ region.
6 more elements
Dependencies are inferred from the claim text.