US 11,444,429 B2Granted

Light source for integrated silicon photonics

AssigneeMarvell Asia Pte Ltd

InventorsXiaoguang He, Radhakrishnan L. Nagarajan

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Abstract

A photonics device includes a silicon wafer including an upper surface region, a trench region, and a ridge structure. The ridge structure electrically isolates the upper surface region from the trench region. A laser diode chip flip-bonded onto the silicon wafer includes an electrode region bonded with the upper surface region, a gain region bonded with the trench region, and an isolation region bonded with the ridge structure. The isolation region electrically isolates the gain region from the electrode region. A conductor layer arranged between the silicon wafer and the laser diode chip includes a first section electrically connecting the gain region to a first electrode of the photonics device and a second section configured to electrically connect the electrode region to a second electrode of the photonics device. The first section is electrically isolated from the second section by the isolation region.

Claims20

Dependent claims

A method for forming a photonics device, the method comprising:

defining a silicon wafer having an upper surface region, a trench region, and a ridge structure located between the upper surface region and the trench region, the ridge structure being configured to electrically isolate the upper surface region from the trench region;
flip-bonding a laser diode chip onto the silicon wafer, ther laser diode chip comprising a gain region bonded to the trench region, an electrode region bonded to the upper surface region, and an isolation region between the electrode region and the gain region, the isolation region configured to electrically isolate the gain region from the electrode region;
and
arranging a conductor layer between the silicon wafer and the laser diode chip, the conductor layer including a first section configured to electrically connect the gain region to an anode electrode of the photonics device and a second section configured to electrically connect the electrode region to a cathode electrode of the photonics device, the first section being electrically isolated from the second section by the isolation region.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 17/169,037Filed 5 Feb 2021 · continuation
Priority: 25 Feb 2020
Published: US 2021/0265805 A126 Aug 2021
Granted: 13 Sep 2022
Term ends: Not estimatedThe source records don’t support an estimate.

Classification27 codes

H01S 5/0042
Measuring characteristics or properties thereof: on wafer testing, e.g. lasers are tested before separating wafer into chips
H01S 5/0207
Substrates, e.g. growth, shape, material, removal or bonding: substrates having a special shape
G01R 31/2635
For testing diodes: testing light-emitting diodes, laser diodes or photodiodes
G02B 6/12004
Of the integrated circuit kind: combinations of two or more optical elements

Family

Application16/800,974Parent of this continuation · filed 25 Feb 2020
US 2021/0265805 A1Pre-grant publication · published 26 Aug 2021
US 10,951,003 B1Parent of this continuation
US 11,444,429 B2This patent

From the US filing history. Foreign family members aren’t listed.

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