Rapid layer-specific photonic annealing of perovskite thin films
AssigneeThe Board of Trustees of The University of Alabama
InventorsDawen Li, Zhongliang Ouyang
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Abstract
Disclosed herein are methods of annealing a perovskite layer, comprising irradiating the perovskite layer with a light source, wherein the light source emits radiation consisting essentially of wavelengths within 50 nm of the wavelength of maximum absorbance (λmax) of the perovskite layer, thereby annealing the perovskite layer. Also disclosed herein are semiconducting devices and articles of manufacture comprising an annealed perovskite layer made by any of the methods described herein, such as solar cells, light-emitting diodes, photodetectors, thin-film transistors, and combinations thereof.
Claims18
A method of forming a solar cell, the method comprising, in any order:
- depositing a hole transport layer on an anode;
- depositing a precursor layer on the hole transport layer, the precursor layer comprising a perovskite precursor composition;
- depositing an electron transport layer on the precursor layer;
- and
- irradiating the solar cell by direct exposure to a UV light emitting diode (UV-LED) light source configured to convert the perovskite precursor composition into a perovskite and thus convert the precursor layer into a perovskite layer;
- wherein the light source emits radiation consisting essentially of wavelengths within 50 nm of the wavelength of maximum absorbance (λmax) of the precursor layer;
- wherein the light source emits radiation having wavelength of 400 nm or less;
- and
- wherein the method substantially excludes thermal conduction outside the precursor layer and/or the perovskite layer.
Dependencies are inferred from the claim text.